Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters

Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters

This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Filsecker, F., Alvarez, R., Bernet, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Insulated gate bipolar transistors
Junctions
Semiconductor diodes
Silicon carbide
Switches
Temperature measurement
Voltage measurement
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Beschreibung
Zusammenfassung:This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out for currents between 50 and 1000 A. Different dc link voltages (2.4, 3.0 and 3.6 kV), junction temperatures (from -25 to 125°C) and di/dt values (0.9-2.2 kA/μs at 1 kA) were considered for the analysis. The effects and interactions of the different parameters in the device behavior are discussed.
ISSN:2329-3721
2329-3748
DOI:10.1109/ECCE.2012.6342434