A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves II...

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Bibliographische Detailangaben
Hauptverfasser: Daneshgar, S., Griffith, Z., Rodwell, M. J. W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Frequency measurement
Heterojunction bipolar transistors
Indium phosphide
Linearity
Power measurement
Radio frequency
Switches
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Beschreibung
Zusammenfassung:A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2012.6340112