2.0-6.0 GHz GaAs MMIC amplifier

2.0-6.0 GHz GaAs MMIC amplifier

The paper presents the results of designing microwave monolithic integrated circuit of two-stage amplifier produced on pHEMT substrate with chip size 2.4×1.6 mm 2 and providing 16.5 dB conversion gain and 15 dBm P1dB on 2.0-6.0 GHz. The method of MMIC multistage amplifier designing is developed. FET...

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Bibliographische Detailangaben
Hauptverfasser: Bezus, S. V., Tolstolutsky, S. I., Tolstolutskaya, A. V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Microwave amplifiers
Microwave circuits
Microwave FET integrated circuits
MMICs
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Beschreibung
Zusammenfassung:The paper presents the results of designing microwave monolithic integrated circuit of two-stage amplifier produced on pHEMT substrate with chip size 2.4×1.6 mm 2 and providing 16.5 dB conversion gain and 15 dBm P1dB on 2.0-6.0 GHz. The method of MMIC multistage amplifier designing is developed. FET topology has been optimized for minimization of parasitic parameters and maximization of dynamic range. GaAs pHEMT MMIC two-stage amplifiers are developed and manufactured by using MESFET with 0.7 μm gate's length as an active element. Characteristics of the device are investigated experimentally in 2.0-6.0 GHz frequency range. Results of measurements are agreed with calculation data and confirm effectiveness of the developed method of designing.