Current-voltage, S-parameter, LFN properties in T-R-T type ESD/EMI filters with TVS Zener diodes developed using epitaxy-based IPD technology

Current-voltage, S-parameter, LFN properties in T-R-T type ESD/EMI filters with TVS Zener diodes developed using epitaxy-based IPD technology

We have developed the T-R-T type ESD/EMI filter using new transient voltage suppressor (TVS) Zener diodes and the epitaxy-based IPD technology. The performance of the filter has been examined in terms of I-V, s-parameter, and LFN properties. The properties demonstrated that the filter kept consisten...

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Bibliographische Detailangaben
Hauptverfasser: Woong-Ki Hong, Bouangeune, Daoheung, Yeon-Ho Kil, Hyun-Duk Yang, Sang-Sik Choi, Deok-Ho Cho, Chel-Jong Choi, Kyu-Hwan Shim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Electric shock
Electromagnetic interference
Electrostatic discharges
Leakage current
Noise
Scattering parameters
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Zusammenfassung:We have developed the T-R-T type ESD/EMI filter using new transient voltage suppressor (TVS) Zener diodes and the epitaxy-based IPD technology. The performance of the filter has been examined in terms of I-V, s-parameter, and LFN properties. The properties demonstrated that the filter kept consistency in the excellent ESD robustness over the MM ±4 kV.
ISSN:0739-5159
2164-9340