Chasing a latent CDM ESD failure by unconventional FA methodology

Chasing a latent CDM ESD failure by unconventional FA methodology

A hard-to-detect functional CDM ESD failure caused by an obscure charge trapping phenomenon on an advanced CMOS IC is described while no physical damage was evident. Advancing failure analysis method by localized thermal LASER annealing and applying analytical ESD test plan led to successful localiz...

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Bibliographische Detailangaben
Hauptverfasser: Dhakad, H., Gossner, H., Zekert, S., Stein, B., Russ, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Electrostatic discharges
Fuses
Integrated circuits
Lasers
Stress
Transistors
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Beschreibung
Zusammenfassung:A hard-to-detect functional CDM ESD failure caused by an obscure charge trapping phenomenon on an advanced CMOS IC is described while no physical damage was evident. Advancing failure analysis method by localized thermal LASER annealing and applying analytical ESD test plan led to successful localization of the root cause.
ISSN:0739-5159
2164-9340