Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's

Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's

Hot-carrier degradation in n- and p-MOSFET's is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated diode current I/sub df/ and the corresponding maximum charge pumping curr...

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Bibliographische Detailangaben
Hauptverfasser: Goh, Y.H., Ah, L.K., Ling, C.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Charge pumps
Current measurement
Degradation
Electronics
Exact sciences and technology
Hot carriers
Leakage current
MOSFET circuits
Radiative recombination
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Substrates
Transistors
Voltage
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Beschreibung
Zusammenfassung:Hot-carrier degradation in n- and p-MOSFET's is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated diode current I/sub df/ and the corresponding maximum charge pumping current I/sub cp/ in the devices after hot-carrier stress. A close correspondence between the two currents is demonstrated.
DOI:10.1109/ICMEL.1997.632931