Compact SiGe HBT EO modulator for analog applications

Compact SiGe HBT EO modulator for analog applications

This paper proposed a compact linearized SiGe HBT EO modulator for applications in analog signal processing. The length of the modulator is only 15 μm. Simulation shows that it possesses a SFDR of 42 dB.

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Bibliographische Detailangaben
Hauptverfasser: Pengfei Wu, Shengling Deng, Huang, Z. Rena
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrooptic modulators
Electrooptical waveguides
Frequency modulation
Heterojunction bipolar transistors
Silicon
Silicon germanium
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Beschreibung
Zusammenfassung:This paper proposed a compact linearized SiGe HBT EO modulator for applications in analog signal processing. The length of the modulator is only 15 μm. Simulation shows that it possesses a SFDR of 42 dB.
ISSN:2160-8989
2160-9004