Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.

Bibliographische Detailangaben

Hauptverfasser:	Meyaard, D. S., Guan-Bo Lin, Qifeng Shan, Jaehee Cho, Schubert, E. F., Hyun Wook Shim, Min-Ho Kim, Cheolsoo Sone
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Electric fields Gallium nitride Light emitting diodes Radiative recombination Temperature Temperature measurement
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