Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.

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Bibliographische Detailangaben
Hauptverfasser: Meyaard, D. S., Guan-Bo Lin, Qifeng Shan, Jaehee Cho, Schubert, E. F., Hyun Wook Shim, Min-Ho Kim, Cheolsoo Sone
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Electric fields
Gallium nitride
Light emitting diodes
Radiative recombination
Temperature
Temperature measurement
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Beschreibung
Zusammenfassung:We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.
ISSN:2160-8989
2160-9004
DOI:10.1364/CLEO_AT.2012.JW3L.2