EQE enhancement of top-cell of GaAs-based triple-junction solar cell using graded-index sio2 nano-pillars sub-wavelength AR-coating

We report the increasing in average external quantum-efficiency (EQE) of 11% on the top-cell of GaAs-based triple-junction solar-cell due to current matching using a graded-index SiO 2 -nano-pillars sub-wavelength/SiO 2 /TiO 2 AR-coating by CF 4 -RIE etching with Ag-nanoparticles mask.

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Bibliographische Detailangaben
Hauptverfasser: Wen-Jeng Ho, Jhih-Kai Syu, Cheng-Ming Yu, Yi-Yu Lee, Jheng-Jie Liu, Shu-Chia Shiu, Ching-Fuh Lin, Hung-Bin Shiau
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We report the increasing in average external quantum-efficiency (EQE) of 11% on the top-cell of GaAs-based triple-junction solar-cell due to current matching using a graded-index SiO 2 -nano-pillars sub-wavelength/SiO 2 /TiO 2 AR-coating by CF 4 -RIE etching with Ag-nanoparticles mask.
ISSN:2160-8989
2160-9004