Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode
Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces. |
---|---|
ISSN: | 2160-8989 2160-9004 |