Laser induced annealing dynamics of photo-electron spectra from silicon field emitter arrays

Laser induced annealing dynamics of photo-electron spectra from silicon field emitter arrays

A marked increase in electron yield, an overall spectral red shift, and the formation of a higher energy peak from Si field emitter arrays (FEAs) are observed in photo-electron spectra throughout a laser annealing process.

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Bibliographische Detailangaben
Hauptverfasser: Keathley, P. D., Sell, A., Putnam, W. P., Guerrera, S., Velasquez-Garcia, L., Kartner, F. X.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Electric potential
Free electron lasers
Laser theory
Plasmons
Silicon
Surface emitting lasers
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Beschreibung
Zusammenfassung:A marked increase in electron yield, an overall spectral red shift, and the formation of a higher energy peak from Si field emitter arrays (FEAs) are observed in photo-electron spectra throughout a laser annealing process.
ISSN:2160-8989
2160-9004
DOI:10.1364/CLEO_SI.2012.CM4L.7