Selective and homo emitter junction formation using precise dopant concentration control by ion implantation and microwave, laser or furnace annealing techniques

We investigated phosphorus and boon implanted emitter and selective emitter junction formation comparing; 1) 15keV to 30keV implant energies, 2) implant dopant dose concentration between 3E14/cm2 to 1E16/cm 2 and 3) various anneal conditions from high temperature (>;1407°C) laser melt annealing t...

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Hauptverfasser:	Borland, John, Moroz, V., Huang, Joanne, Chen, John, Yao-Jen Lee, Oesterlin, P., Venema, P., Geerman, H., Zhao, Peter, Wang, Larry
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing dopant activation Implants ion implantation Junctions laser anneal liquid phase diffusion Liquids Masers microwave anneal SIMS analysis solid phase diffusion Solids Surface emitting lasers
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Beschreibung
Zusammenfassung:	We investigated phosphorus and boon implanted emitter and selective emitter junction formation comparing; 1) 15keV to 30keV implant energies, 2) implant dopant dose concentration between 3E14/cm2 to 1E16/cm 2 and 3) various anneal conditions from high temperature (>;1407°C) laser melt annealing to low temperature (
ISSN:	0160-8371
DOI:	10.1109/PVSC.2012.6318018