Transition rate in the InGaN quantum dot intermediate-band solar cell

This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell. Different dot sizes and layers are compared and the result shows significant differences due to different quantum confinement strength. The band structure and transition rate in the quantum dot are calculated. The efficiency of the structure can reach 31% in this structure. With these information, we hope to provide guidance to experimentalists for design of InGaN intermediate band solar cell.