Metal bonded carrier for high electron emission carbon nanotube emitters

Metal bonded carrier for high electron emission carbon nanotube emitters

We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570 °C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds...

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Bibliographische Detailangaben
Hauptverfasser: Su Woong Lee, Young Ju Eom, Hae Na Won, Jung Su Gang, Jin Jang, Park, K. C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bonding
Cathodes
CNT
Contact resistance
Electron emission
eutectic bondong
Metals
RAP
Silicon
Substrates
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Beschreibung
Zusammenfassung:We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570 °C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.
ISSN:2164-2370
DOI:10.1109/IVNC.2012.6316962