Research on Transient Model of IGBT

Electromagnetic interference problem caused by fast voltage/current rate of switching components becomes more and more seriously, which effects electromagnetic compatibility of devices greatly. It is necessary to build the transient model of switching devices. In this paper, a simple method of IGBT modeling is proposed, which depends on the data provided by chip manual, without the requirements of complex experimental test. The model are verified by the comparison of simulation and experiment results in time and frequency domain, the consistence of which reveals the validity of the model under the frequency of conduction.