Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth

Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth

Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yi-Jen Chiu, Meischer, S.B., Bowers, J.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Annealing
Bandwidth
Coplanar waveguides
Gallium arsenide
Microwave measurements
Optical waveguides
Photodetectors
Signal detection
Wavelength measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.1997.630569