Silicon TFTs and circuits on glass and on plastics

Silicon TFTs and circuits on glass and on plastics

Silicon technology leading to reliable CMOS electronics on any substrate supporting a maximum temperature of 180°C is presented. The technology is based on as-deposited microcrystalline silicon deposited in standard PECVD reactor using usual silane and hydrogen gases and adding only argon to improve...

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Bibliographische Detailangaben
Hauptverfasser: Mohammed-Brahim, T., Janfaoui, S., Kandoussi, K., Simon, C., Coulon, N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Argon
CMOS integrated circuits
Insulators
Logic gates
Silicon
Thin film transistors
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Beschreibung
Zusammenfassung:Silicon technology leading to reliable CMOS electronics on any substrate supporting a maximum temperature of 180°C is presented. The technology is based on as-deposited microcrystalline silicon deposited in standard PECVD reactor using usual silane and hydrogen gases and adding only argon to improve the crystalline fraction. Very high uniformity on the size of our substrate (5cm×5cm) is demonstrated. Reproducibility is obtained even if the flows of the gases are slightly varied. New silicon technology producing circuits that are able to go with any physical function is then demonstrated.