Organic field-effect transistors based on 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene oligomer

Organic field-effect transistors based on 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene oligomer

The structures and the morphologies of the vacuum-thermal deposited films based on a new phenylene-thiophene oligomer, 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene (37HPTDBT), have been characterized. The organic field-effect transistors (OFETs) with thin 37HPTDBT films exhibited high mobi...

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Bibliographische Detailangaben
Hauptverfasser: Duan, Zongfan, Yanagi, Yiuchiro, Ohuchi, Hirokuni, Takayanagi, Yutaro, Zhao, Gaoyang, Nishioka, Yasushiro
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
OFETs
Performance evaluation
Silicon
Substrates
X-ray scattering
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Zusammenfassung:The structures and the morphologies of the vacuum-thermal deposited films based on a new phenylene-thiophene oligomer, 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene (37HPTDBT), have been characterized. The organic field-effect transistors (OFETs) with thin 37HPTDBT films exhibited high mobilities ranging from 0.06-0.3 cm 2 /Vs.