Novel simulation of deep-submicron MOSFET circuits

The effects of scaling down the MOSFET dimensions to the deep-submicron range lead to operating regions that may be modeled by locally linear equations. The piecewise linear simulator seems to be the obvious choice. Certain requirements must be satisfied by a PL simulator for the successful manipula...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bruma, S., Otten, R.H.J.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit simulation CMOS technology Energy consumption Integrated circuit interconnections Integrated circuit technology MOSFET circuits Piecewise linear techniques Semiconductor device modeling Very large scale integration Voltage
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