Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region

Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region

A silicon avalanche photodiode fabricated by CMOS process was characterized at 405 nm wavelength for Blu-ray applications. The avalanche gain of 36, the maximum responsivity of 2.61 A/W, and the bandwidth of 300 MHz were achieved.

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Bibliographische Detailangaben
Hauptverfasser: Shimotori, T., Maekita, K., Maruyama, T., Iiyama, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Avalanche photodiodes
Bandwidth
CMOS process
Electronic circuits
Silicon
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Beschreibung
Zusammenfassung:A silicon avalanche photodiode fabricated by CMOS process was characterized at 405 nm wavelength for Blu-ray applications. The avalanche gain of 36, the maximum responsivity of 2.61 A/W, and the bandwidth of 300 MHz were achieved.
ISSN:2166-8884
2166-8892
DOI:10.1109/OECC.2012.6276546