First demonstration of AlInN/GaN HEMTs amplifiers at K band

AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper, we present the first published power results of tw...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jardel, O., Callet, G., Lancereau, D., Jacquet, J-C., Reveyrand, T., Sarazin, N., Aubry, R., Leger, S., Chartier, E., Oualli, M., Dua, C., Piotrowicz, S., Morvan, E., Di Forte Poisson, M.A., Delage, S.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	AlInN/GaN HEMTs Aluminum gallium nitride Gain Gallium nitride HEMTs K band power amplifiers MODFETs Power measurement
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