First demonstration of AlInN/GaN HEMTs amplifiers at K band
AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper, we present the first published power results of tw...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper, we present the first published power results of two K-band hybrid amplifier demonstrators at 20GHz and 26.5GHz using 0.25µm gate length devices. At these frequencies, respectively, cw RF output power of 4.5 Watts with 20% PAE and 1.65 W with 15.5 % of PAE were obtained. These state-of-the-art results confirm the potential of AlInN/GaN technology for high frequency applications. |
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ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.2012.6259551 |