L-band 360W and 65% PAE GaN amplifier with mixed Class-E / F harmonic control

L-band 360W and 65% PAE GaN amplifier with mixed Class-E / F harmonic control

In this paper, an L-band partially internally matched GaN amplifier is presented, which is designed so that Class-F condition is met for the 2nd harmonic and Class-E condition is met for the 3rd harmonic. Utilizing these harmonic conditions, high output power together with high efficiency was obtain...

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Bibliographische Detailangaben
Hauptverfasser: Yamanaka, K., Yunoue, N., Chaki, S., Nakayama, M., Hirano, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
HEMTs
Indexes
Length measurement
MODFET
power amplifiers
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Beschreibung
Zusammenfassung:In this paper, an L-band partially internally matched GaN amplifier is presented, which is designed so that Class-F condition is met for the 2nd harmonic and Class-E condition is met for the 3rd harmonic. Utilizing these harmonic conditions, high output power together with high efficiency was obtained overcoming power limitation of Class-E. As a result, 360W output power and 65% PAE was successfully obtained at L-band with in-house GaN HEMT.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2012.6259397