A Gallium Nitride Distributed Bragg Reflector cavity for integrated photonics applications

A Gallium Nitride Distributed Bragg Reflector cavity for integrated photonics applications

A deep etched 1D Distributed Bragg Reflector (DBR) cavity in GaN-AlN-Sapphire has been analytically modelled and simulated using 2D FDTD. A 3 rd -order DBR has also been modelled including dye loaded polymer layer which can be used for emission enhancement characterization. A structure fabricated us...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hueting, N. A., Pugh, J. R., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., Wang, T., Cryan, M. J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cavity resonators
Distributed Bragg reflector
Distributed Bragg reflectors
Etching
Fabrication
Finite difference methods
finite-difference time-domain (FDTD)
focused ion beam
Gallium nitride
Time domain analysis
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A deep etched 1D Distributed Bragg Reflector (DBR) cavity in GaN-AlN-Sapphire has been analytically modelled and simulated using 2D FDTD. A 3 rd -order DBR has also been modelled including dye loaded polymer layer which can be used for emission enhancement characterization. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using micro-photoluminescence.
ISSN:2162-7339
DOI:10.1109/ICTON.2012.6253827