Small-signal analysis of short base transport by transmission line model

The small-signal current gain model of short base bipolar transistors has been derived using the transmission line modelling. It has been shown that quasi-ballistic effects occuring in short base minority carrier transport is inherently included in the current gain model. It appears that quasi-balli...

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Bibliographische Detailangaben
Hauptverfasser:	Karamarkovic, J.P., Jankovic, N.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Ballistic transport Bipolar transistors Boundary conditions Differential equations Distributed parameter circuits Electronics Exact sciences and technology Frequency Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thermal engineering Transistors Transmission lines Voltage
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Beschreibung
Zusammenfassung:	The small-signal current gain model of short base bipolar transistors has been derived using the transmission line modelling. It has been shown that quasi-ballistic effects occuring in short base minority carrier transport is inherently included in the current gain model. It appears that quasi-ballistic effects in general decrease the static and dynamic current gain. The two approximative asymptotical expressions for static current gain, related to the pure diffusive and pure ballistic transport, has been also derived.
DOI:	10.1109/ICMEL.1997.625237