Novel flowable CVD process technology for sub-20nm interlayer dielectrics

Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new concept and precursor. Remote plasma during low t...

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Bibliographische Detailangaben

Hauptverfasser:	Honggun Kim, Seungheon Lee, Jun-Won Lee, ByeongJu Bae, YongSoon Choi, Young-Ho Koh, Hayoung Yi, Eunkee Hong, Mansug Kang, Seok Woo Nam, Ho-Kyu Kang, Chilhee Chung, Jinhyung Park, Namjin Cho, Seungmoo Lee
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Dielectrics Plasma temperature Random access memory Silicon
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