Novel flowable CVD process technology for sub-20nm interlayer dielectrics

Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new concept and precursor. Remote plasma during low temperature deposition and ozone treatment was adopted to stabilize the film. We also developed a novel Flowable CVD process which does not oxidize Si or electrode, resulted in removal of Si 3 N 4 stopper layer as an oxidation or diffusion barrier. After the application of Flowable CVD to 20nm DRAM ILD, we could reduce not only loading capacitance of Bit-line by 15% but also enhance comparable productivity. Through the successful development of sub-20nm DRAM ILD Gap-fill process, Flowable CVD was successful demonstrated as a promising candidate for mass production-worthy ILD in sub-20nm next generation devices.