RESET-first Resistance Switching Mechanism of HfO2 films with Ti electrode
RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x /HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, ED...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x /HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior. |
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ISSN: | 2380-632X 2380-6338 |
DOI: | 10.1109/IITC.2012.6251589 |