Integration of a k=2.3 spin-on polymer for the sub-28nm technology node using EUV lithography

Integration of a k=2.3 spin-on polymer for the sub-28nm technology node using EUV lithography

In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH 2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches...

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Hauptverfasser: Wilson, C. J., Lazzarino, F., Truffert, V., Kirimura, T., de Marneffe, J., Verdonck, P., Hirai, M., Nakatani, K., Tada, M., Heylen, N., El-Mekki, Z., Vanstreels, K., Van Besien, E., Ciofi, I., Stucchi, M., Croes, K., Zhang, L., Demuynck, S., Ercken, M., Xu, K., Baklanov, M., Tokei, Z.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Dielectrics
Electric breakdown
Plasmas
Polymers
Slurries
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Beschreibung
Zusammenfassung:In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH 2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct CMP on time dependent dielectric breakdown is also studied.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2012.6251566