A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell V TH window by >;170% while a 5T embedded flas...

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Bibliographische Detailangaben

Hauptverfasser:	Seung-Hwan Song, Ki Chul Chun, Kim, C. H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Computer architecture Flash memory Logic gates Microprocessors Switches Transistors
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