A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell V TH window by >;170% while a 5T embedded flas...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Seung-Hwan Song, Ki Chul Chun, Kim, C. H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Computer architecture
Flash memory
Logic gates
Microprocessors
Switches
Transistors
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Beschreibung
Zusammenfassung:A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell V TH window by >;170% while a 5T embedded flash memory cell with a selective row refresh scheme is employed for improved endurance.
ISSN:2158-5601
2158-5636
DOI:10.1109/VLSIC.2012.6243824