Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications
4F 2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell area. Read/write specifications for memory operation...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | 4F 2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell area. Read/write specifications for memory operation in a chip are presented by minimizing sneak current through unselected cells. The characteristics of memory cell (nonlinearity, Kw >;8, Iop |
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ISSN: | 0743-1562 |
DOI: | 10.1109/VLSIT.2012.6242506 |