Real-time Soft-Error testing of 40nm SRAMs

Real-time Soft-Error testing of 40nm SRAMs

This work reports the real-time Soft-Error Rate (SER) characterization of more than 7 Gbit of SRAM circuits manufactured in 40 nm CMOS technology and subjected to natural radiation (atmospheric neutrons). This experiment has been conducted since March 2011 at mountain altitude (2552 m of elevation)...

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Hauptverfasser: Autran, J. L., Serre, S., Munteanu, D., Martinie, S., Semikh, S., Sauze, S., Uznanski, S., Gasiot, G., Roche, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atmospheric measurements
atmospheric neutrons
Engineering Sciences
Life estimation
Micro and nanotechnologies
Microelectronics
Monitoring
multiple cell upset
Neutrons
Random access memory
Real time systems
real-time testing
single-event upset
soft-error rate
SRAM
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Beschreibung
Zusammenfassung:This work reports the real-time Soft-Error Rate (SER) characterization of more than 7 Gbit of SRAM circuits manufactured in 40 nm CMOS technology and subjected to natural radiation (atmospheric neutrons). This experiment has been conducted since March 2011 at mountain altitude (2552 m of elevation) on the ASTEP Platform. The first experimental results, cumulated over more than 7,500 h of operation, are analyzed in terms of single bit upset, multiple cell upsets, physical bitmap and convergence of the SER. The comparison of the experimental data with Monte Carlo simulations and accelerated tests is finally reported and discussed.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2012.6241814