Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary m...

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Veröffentlicht in:IEEE transactions on nuclear science 2012-08, Vol.59 (4), p.749-754
Hauptverfasser: Kuboyama, Satoshi, Ikeda, Naomi, Mizuta, Eiichi, Abe, Hiroshi, Hirao, Toshio, Tamura, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
Catastrophic failure analysis
Damage
Devices
Electric breakdown
Gates
Heavy ions
Ions
Logic gates
MOSFETs
Nuclear power generation
Periodic structures
power MOSFETs
radiation damage
Radiation effects
Rupture
Semiconductor device modeling
single-event effects
Space radiation
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Beschreibung
Zusammenfassung:The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was also proposed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2201501