Disturbance fault testing on various NAND flash memories

Disturbance fault testing on various NAND flash memories

Summary form only given. Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chih-Sheng Hou, Jin-Fu Li
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Algorithm design and analysis
Arrays
Ash
Europe
Flash memory
Organizations
Testing
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Summary form only given. Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.
ISSN:1530-1877
1558-1780
DOI:10.1109/ETS.2012.6233030