Reverse conduction properties of vertical SiC trench JFETs

Reverse conduction properties of vertical SiC trench JFETs

1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel diode in applications requiring reverse commutatio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Sheridan, D. C., Chatty, K., Bondarenko, V., Casady, J. B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
JFETs
Logic gates
MOSFETs
reverse conduction
Schottky diodes
SiC JFET
Silicon carbide
Switches
synchronous FET
VJFET
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel diode in applications requiring reverse commutation. Device characteristics and experimental results are given for both traditional half-bridge and cascode topologies.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2012.6229102