4.5-kV multi-chip level-shift circuit using dedicated discrete IGBTs for driving high-power IGBTs

4.5-kV multi-chip level-shift circuit using dedicated discrete IGBTs for driving high-power IGBTs

A 4.5-kV voltage level-shift circuit with a multi-chip structure composed of upper and lower arm driver ICs and dedicated discrete IGBTs was developed. It was experimentally confirmed that this level-shift circuit could drive a 3.3-kV/1200-A IGBT module.

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Bibliographische Detailangaben
Hauptverfasser: Sakurai, N., Takami, K., Yukutake, S., Kouno, Y., Sakano, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Driver IC
IGBT
Insulated gate bipolar transistors
Integrated circuits
Inverters
level-shift
Logic gates
MOSFETs
multi-chip
Optical fibers
Resistors
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Beschreibung
Zusammenfassung:A 4.5-kV voltage level-shift circuit with a multi-chip structure composed of upper and lower arm driver ICs and dedicated discrete IGBTs was developed. It was experimentally confirmed that this level-shift circuit could drive a 3.3-kV/1200-A IGBT module.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2012.6229061