Photo-Resist Protected Technology Application on Solution-Based IZO-TFT

Solution-based indium-znic-Voxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm 2 /Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.