10 Gb/s operation of GaInAs/InP top air-clad. Lateral junction waveguide-type photodiode
10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm.
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creator | Shindo, T. Koguchi, T. Futami, M. Shinno, K. Doi, K. Amemiya, T. Nishiyama, N. Arai, S. |
description | 10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm. |
doi_str_mv | 10.1109/OIC.2012.6224447 |
format | Conference Proceeding |
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Lateral junction waveguide-type photodiode</atitle><btitle>2012 Optical Interconnects Conference</btitle><stitle>OIC</stitle><date>2012-05</date><risdate>2012</risdate><spage>60</spage><epage>61</epage><pages>60-61</pages><issn>2376-8665</issn><isbn>9781457716201</isbn><isbn>1457716208</isbn><eisbn>1457716186</eisbn><eisbn>9781457716188</eisbn><eisbn>1457716194</eisbn><eisbn>9781457716195</eisbn><abstract>10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm.</abstract><pub>IEEE</pub><doi>10.1109/OIC.2012.6224447</doi><tpages>2</tpages></addata></record> |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Distributed feedback devices Junctions Optical device fabrication Optical refraction Optical waveguides Photodiodes Semiconductor lasers |
title | 10 Gb/s operation of GaInAs/InP top air-clad. Lateral junction waveguide-type photodiode |
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