10 Gb/s operation of GaInAs/InP top air-clad. Lateral junction waveguide-type photodiode

10 Gb/s operation of GaInAs/InP top air-clad. Lateral junction waveguide-type photodiode

10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm.

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Bibliographische Detailangaben
Hauptverfasser: Shindo, T., Koguchi, T., Futami, M., Shinno, K., Doi, K., Amemiya, T., Nishiyama, N., Arai, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Distributed feedback devices
Junctions
Optical device fabrication
Optical refraction
Optical waveguides
Photodiodes
Semiconductor lasers
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Beschreibung
Zusammenfassung:10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm.
ISSN:2376-8665
DOI:10.1109/OIC.2012.6224447