EUV and plasma observation in capillary Z-pinch xenon plasmas

EUV and plasma observation in capillary Z-pinch xenon plasmas

Capillary Z-pinch plasmas were studied for the sake of EUV light source development for next generation semiconductor lithography. Magnetic pulse compression generator drove the capillary load providing approximately 25 kA of peak current and 275 ns of pulse duration. Radiation characteristics were...

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Hauptverfasser: Teramoto, Y., Sato, H., Bessho, K., Niimi, G., Shirai, T., Yamatani, D., Takemura, T., Yokota, T., Paul, K. C., Kabuki, K., Miyauchi, K., Ikeuchi, M., Okubo, K., Hotta, K., Yoshioka, M., Toyoda, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cathodes
Conductors
Monitoring
Plasmas
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Zusammenfassung:Capillary Z-pinch plasmas were studied for the sake of EUV light source development for next generation semiconductor lithography. Magnetic pulse compression generator drove the capillary load providing approximately 25 kA of peak current and 275 ns of pulse duration. Radiation characteristics were investigated using 7-mm-diameter and 6-mm-long capillary. Xenon was used as fuel gas for radiating EUV light of which wavelength is l3.5 nm. Measurements covered overall properties of EUV source such as load current and voltage, absolute radiated EUV energy, spectrum, and image of in-band EUV radiation. Optimum gas condition and dependence of Z-pinch dynamics on the gas condition were investigated.