Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM) technology. This work reports a path for PCM material exploration toward the tellurium poor region of the GeSbTe (GST) ternary compound system. Data...

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Hauptverfasser: Boniardi, M., Redaelli, A., Tortorelli, I., Lavizzari, S., Pirovano, A., Pellizzer, F., Varesi, E., Erbetta, D., Bresolin, C., Modelli, A., Bez, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Compounds
Metals
Phase change materials
Resistance
Temperature sensors
Threshold voltage
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Zusammenfassung:The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM) technology. This work reports a path for PCM material exploration toward the tellurium poor region of the GeSbTe (GST) ternary compound system. Data retention enhancement is reported and associated to a factor 1.5 increase of the crystallization activation energy. A detailed description and discussion of the remarkable electrical and thermal parameters of the PCM cell as a function of GST composition is provided.
ISSN:2159-483X
DOI:10.1109/IMW.2012.6213679