Retention Model for High-Density ReRAM

Retention Model for High-Density ReRAM

A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.

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Bibliographische Detailangaben
Hauptverfasser: Wei, Z., Takagi, T., Kanzawa, Y., Katoh, Y., Ninomiya, T., Kawai, K., Muraoka, S., Mitani, S., Katayama, K., Fujii, S., Miyanaga, R., Kawashima, Y., Mikawa, T., Shimakawa, K., Aono, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Degradation
Electrodes
Resistance
Scanning electron microscopy
Switches
Temperature measurement
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Beschreibung
Zusammenfassung:A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.
ISSN:2159-483X
DOI:10.1109/IMW.2012.6213638