Modeling the effect of phosphorus dose loss at the SiO/sub 2/ interface on CMOS device characteristics
A model for the phosphorus dose loss effect is developed and incorporated into the process simulator PROPHET. The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simul...
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| creator | Vuong, H.-H. Rafferty, C.S. McMacken, J.R. Ning, J. Chaudhry, S. |
| description | A model for the phosphorus dose loss effect is developed and incorporated into the process simulator PROPHET. The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simulations of NMOS, PMOS, and isolation structures for actual VLSI technologies. Comparison of the simulated and measured device characteristics and their dependence on substrate bias and structure geometry shows good agreement, and furthermore highlights the importance of the dose loss phenomenon in these structures. |
| doi_str_mv | 10.1109/SISPAD.1997.621342 |
| format | Conference Proceeding |
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The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simulations of NMOS, PMOS, and isolation structures for actual VLSI technologies. Comparison of the simulated and measured device characteristics and their dependence on substrate bias and structure geometry shows good agreement, and furthermore highlights the importance of the dose loss phenomenon in these structures.</description><identifier>ISBN: 9780780337756</identifier><identifier>ISBN: 0780337751</identifier><identifier>DOI: 10.1109/SISPAD.1997.621342</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; CMOS technology ; Doping profiles ; Implants ; MOS devices ; Oxidation ; Partial differential equations ; Semiconductor device modeling ; Semiconductor process modeling ; Silicon</subject><ispartof>SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. 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Technical Digest</title><addtitle>SISPAD</addtitle><description>A model for the phosphorus dose loss effect is developed and incorporated into the process simulator PROPHET. The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simulations of NMOS, PMOS, and isolation structures for actual VLSI technologies. Comparison of the simulated and measured device characteristics and their dependence on substrate bias and structure geometry shows good agreement, and furthermore highlights the importance of the dose loss phenomenon in these structures.</description><subject>Annealing</subject><subject>CMOS technology</subject><subject>Doping profiles</subject><subject>Implants</subject><subject>MOS devices</subject><subject>Oxidation</subject><subject>Partial differential equations</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>Silicon</subject><isbn>9780780337756</isbn><isbn>0780337751</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9Ts2KwjAYDCyCi_YFPH0vsG3SVGuP4g96EIXuXbLpFxvpNpIvLuzbG9SzwwzDMHMYxiaCp0LwKqt39XGxSkVVleksF7LIP1hSlXMeKWVZTmdDlhBdeERRTGXOP5nZuwY7258htAhoDOoAzsC1dRTlbwSNI4TOEYEKj1VtDxndfiDPwPYBvVEawfWw3B9qaPDPxqhb5ZWOpaVgNY3ZwKiOMHn5iE026-_l9ssi4unq7a_y_6fnafm2vAMKX0ZL</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Vuong, H.-H.</creator><creator>Rafferty, C.S.</creator><creator>McMacken, J.R.</creator><creator>Ning, J.</creator><creator>Chaudhry, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Modeling the effect of phosphorus dose loss at the SiO/sub 2/ interface on CMOS device characteristics</title><author>Vuong, H.-H. ; Rafferty, C.S. ; McMacken, J.R. ; Ning, J. ; Chaudhry, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_6213423</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Annealing</topic><topic>CMOS technology</topic><topic>Doping profiles</topic><topic>Implants</topic><topic>MOS devices</topic><topic>Oxidation</topic><topic>Partial differential equations</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor process modeling</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Vuong, H.-H.</creatorcontrib><creatorcontrib>Rafferty, C.S.</creatorcontrib><creatorcontrib>McMacken, J.R.</creatorcontrib><creatorcontrib>Ning, J.</creatorcontrib><creatorcontrib>Chaudhry, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vuong, H.-H.</au><au>Rafferty, C.S.</au><au>McMacken, J.R.</au><au>Ning, J.</au><au>Chaudhry, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Modeling the effect of phosphorus dose loss at the SiO/sub 2/ interface on CMOS device characteristics</atitle><btitle>SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest</btitle><stitle>SISPAD</stitle><date>1997</date><risdate>1997</risdate><spage>85</spage><epage>88</epage><pages>85-88</pages><isbn>9780780337756</isbn><isbn>0780337751</isbn><abstract>A model for the phosphorus dose loss effect is developed and incorporated into the process simulator PROPHET. The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simulations of NMOS, PMOS, and isolation structures for actual VLSI technologies. Comparison of the simulated and measured device characteristics and their dependence on substrate bias and structure geometry shows good agreement, and furthermore highlights the importance of the dose loss phenomenon in these structures.</abstract><pub>IEEE</pub><doi>10.1109/SISPAD.1997.621342</doi></addata></record> |
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| identifier | ISBN: 9780780337756 |
| ispartof | SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest, 1997, p.85-88 |
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| language | eng |
| recordid | cdi_ieee_primary_621342 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing CMOS technology Doping profiles Implants MOS devices Oxidation Partial differential equations Semiconductor device modeling Semiconductor process modeling Silicon |
| title | Modeling the effect of phosphorus dose loss at the SiO/sub 2/ interface on CMOS device characteristics |
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