Modeling the effect of phosphorus dose loss at the SiO/sub 2/ interface on CMOS device characteristics

A model for the phosphorus dose loss effect is developed and incorporated into the process simulator PROPHET. The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simulations of NMOS, PMOS, and isolation structures for actual VLSI technologies. Comparison of the simulated and measured device characteristics and their dependence on substrate bias and structure geometry shows good agreement, and furthermore highlights the importance of the dose loss phenomenon in these structures.