A novel approach to optical wafer pre-alignment using innovative ranging edge detectors

This work describes a novel approach to improving accuracy of optical wafer pre-align systems especially for thin, warped, bonded or carrierless-ultrathin wafers. Using 3D wafer modeling, provided by innovative Ranging Edge Detectors (RED, RE-Detector), the proposed signal processing enables maximum...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jerman, T., Priewald, R. H., Leitgeb, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This work describes a novel approach to improving accuracy of optical wafer pre-align systems especially for thin, warped, bonded or carrierless-ultrathin wafers. Using 3D wafer modeling, provided by innovative Ranging Edge Detectors (RED, RE-Detector), the proposed signal processing enables maximum likelihood parameter estimation for best wafer alignment results. Additionally the sensor principle of an RE-Detector enables accurate detection of transparent substrates like sapphire (Al 2 O 3 ), silicon carbide (SiC) or evec glass wafers. This paper describes how wafer pre-alignment has been modified for thin wafer handling with RED pee-alignment resulting in significantly better position accuracy, less wafer damage and cost reduction.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2012.6212918