Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings

Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings

The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are obse...

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Veröffentlicht in:IEEE photonics technology letters 2012-07, Vol.24 (14), p.1203-1205
Hauptverfasser: Lin, Wei-Hsun, Lin, Meng-Yu, Wu, Shung-Yi, Lin, Shih-Yen
Format: Artikel
Sprache:eng
Schlagworte:
Antimony
Conferences
Fiber optics
Flux
Gallium arsenide
GaSb quantum rings (QR)
Light emitting diodes
light-emitting diodes (LEDs)
Luminescence
Nanomaterials
Nanostructure
Optical fibers
Periodic structures
PIN photodiodes
Quantum dots
Wave functions
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Zusammenfassung:The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2200247