Some Semiconductor Device Physics Considerations and Clarifications

We present some clarifications of band diagrams, quasi-Fermi levels, and the channel shape of metal-oxide-semiconductor field-effect transistors that are frequently misrepresented in textbooks. We consider both simple first-order calculations and detailed computer simulations to show how these param...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-07, Vol.59 (7), p.1993-1996
Hauptverfasser:	Xuan Yang, Schroder, D. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Educational institutions Electronics Exact sciences and technology Metal-oxide-semiconductor field-effect transistors MOSFETs P-n junctions quasi-Fermi levels semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Silicon Substrates Transistors
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Beschreibung
Zusammenfassung:	We present some clarifications of band diagrams, quasi-Fermi levels, and the channel shape of metal-oxide-semiconductor field-effect transistors that are frequently misrepresented in textbooks. We consider both simple first-order calculations and detailed computer simulations to show how these parameters are better represented.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2012.2195011