A robust, modular, IGBT power supply for configurable series/parallel operation at high power and frequency
There is considerable interest in solid state power supplies based on Insulated Gate Bi-polar Transistor (IGBT) technologies due to their large and efficient power handling capabilities. Historically, IGBTs have been limited in switching frequency, difficult to arrange in series configurations for h...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | There is considerable interest in solid state power supplies based on Insulated Gate Bi-polar Transistor (IGBT) technologies due to their large and efficient power handling capabilities. Historically, IGBTs have been limited in switching frequency, difficult to arrange in series configurations for high voltage applications, and readily damaged if not properly controlled. There are a large number of applications that would greatly benefit from a highly configurable, high current, high voltage, modular IGBT based solid state power supply. For example, pulsed Radio Frequency (RF) amplifiers in the several MW class operating at 50 kHz to 5 MHz used for current drive, plasma heating, and ionization within the fusion science community could see significant cost savings when compared to traditional tube based supplies. Other applications that would immediately benefit from a low cost IGBT option include active magnetic coil control for feedback, inductive plasma generation, fast rise-time high voltage triggers, and controllable high current switches. |
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ISSN: | 2158-4915 2158-4923 |
DOI: | 10.1109/PPC.2011.6191607 |